Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
Researchers at the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia have investigated whether the temperature coefficient of the short circuit current in perovskite-silicon ...
A German research team has developed a semiconductor-based protection concept tailored to renewable energy systems that forces a permanent short circuit in less than 1 millisecond in the event of a ...
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