As device designers look beyond 22 nm, it is becoming clear that we are simply running out of carrier mobility. Strain engineering has helped a lot. By applying physical strain to the channel of a ...

“The germanium–tin system we have been testing makes it possible to overcome the physical limitations of silicon technology,” says Qing-Tai Zhao. In experiments, the germanium–tin transistor exhibits ...

The drive currents achievable by the transistors containing germanium were higher by 15%. The researchers attributed this improvement to the compressive strain in the nanowires caused by their ...

The germanium in the silicon lattice provides far more benefits to a bipolar transistor than it does to the germanium-implanted channel of a strained-silicon-CMOS process. Like with the strained ...

Germanium outperforms silicon in energy efficient transistors with n- und p- conduction. ScienceDaily . Retrieved May 2, 2025 from www.sciencedaily.com / releases / 2017 / 02 / 170203101507.htm ...

With a silicon-germanium channel and EUV lithography, IBM crosses the 10nm barrier. ... By mixing some germanium into the channel, electron mobility increases, and adequate current can flow.

That is a pity, because silicon germanium would have decisive advantages: "The charge carrier concentration is higher, especially positive charge carriers, the so-called 'holes', ...

silicon germanium 1 Articles . Open Source High Speed SiGe IC Production For Free! July 8, 2024 by Dave Rowntree 7 Comments . We’ve covered the Tiny Tapeout project a few times on these pages, ...

Scientists at Forschungszentrum Jülich have fabricated a new type of transistor from a germanium–tin alloy that has several advantages over conventional switching elements. Charge carriers can ...

“The germanium–tin system we have been testing makes it possible to overcome the physical limitations of silicon technology,” says Qing-Tai Zhao. In experiments, the germanium–tin transistor exhibits ...